? semiconductor components industries, llc, 2007 july, 2007 - rev. 12 1 publication order number: mje200/d mje200 - npn, MJE210 - pnp preferred device complementary silicon power plastic transistors these devices are designed for low voltage, low-power, high-gain audio amplifier applications. features ? collector-emitter sustaining voltage - v ceo(sus) = 25 vdc (min) @ i c = 10 madc ? high dc current gain - h fe = 70 (min) @ i c = 500 madc = 45 (min) @ i c = 2.0 adc = 10 (min) @ i c = 5.0 adc ? low collector-emitter saturation voltage - v ce(sat) = 0.3 vdc (max) @ i c = 500 madc = 0.75 vdc (max) @ i c = 2.0 adc ? high current-gain - bandwidth product - f t = 65 mhz (min) @ i c = 100 madc ? annular construction for low leakage - i cbo = 100 nadc @ rated v cb ? pb-free packages are available* maximum ratings rating symbol value unit collector-emitter voltage v ceo 40 vdc collector-base voltage v cb 25 vdc emitter-base voltage v eb 8.0 vdc collector current - continuous - peak i c 5.0 10 adc base current i b 1.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 15 0.12 w mw/ c total power dissipation @ t c = 25 c derate above 25 c p d 1.5 0.012 w mw/ c operating and storage junction temperature range t j , t stg C65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction-to-case jc 8.34 c/w thermal resistance, junction-to-ambient jc 83.4 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ordering information mje200 to-225 500 units/box 5.0 amperes power transistors complementary silicon 25 volts, 15 watts http://onsemi.com mje200g to-225 (pb-free) 500 units/box to-225 case 77 style 1 2 1 3 marking diagram yww je2x0g y = year ww = work week je2x0 = device code x = 0 or 1 g = pb-free package preferred devices are recommended choices for future use and best overall value. MJE210 to-225 500 units/box MJE210g to-225 (pb-free) 500 units/box MJE210t to-225 50 units/rail MJE210tg to-225 (pb-free) 50 units/rail
mje200 - npn, MJE210 - pnp http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ????????????????????? ????????????????????? characteristic ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????????????????? ????????????????????????????????? ????????????????????? ? ??????????????????? ? ????????????????????? collector-emitter sustaining voltage (note 1) (i c = 10 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 25 ??? ? ? ? ??? - ???? ? ?? ? ???? vdc ????????????????????? ? ??????????????????? ? ????????????????????? collector cutoff current (v cb = 40 vdc, i e = 0) (v cb = 40 vdc, i e = 0, t j = 125 c) ????? ? ??? ? ????? i cbo ???? ? ?? ? ???? - - ??? ? ? ? ??? 100 100 ???? ? ?? ? ???? nadc adc ????????????????????? ? ??????????????????? ? ????????????????????? emitter cutoff current (v be = 8.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? - ??? ? ? ? ??? 100 ???? ? ?? ? ???? nadc ????????????????????????????????? ????????????????????????????????? on characteristics ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? dc current gain (note 1) (i c = 500 madc, v ce = 1.0 vdc) (i c = 2.0 adc, v ce = 1.0 vdc) (i c = 5.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 70 45 10 ??? ? ? ? ? ? ? ??? - 180 - ???? ? ?? ? ? ?? ? ???? - ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? collector-emitter saturation voltage (note 1) (i c = 500 madc, i b = 50 madc) (i c = 2.0 adc, i b = 200 madc) (i c = 5.0 adc, i b = 1.0 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? - - - ??? ? ? ? ? ? ? ??? 0.3 0.75 1.8 ???? ? ?? ? ? ?? ? ???? vdc ????????????????????? ? ??????????????????? ? ????????????????????? base-emitter saturation voltage (note 1) (i c = 5.0 adc, i b = 1.0 adc) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? - ??? ? ? ? ??? 2.5 ???? ? ?? ? ???? vdc ????????????????????? ? ??????????????????? ? ????????????????????? base-emitter on voltage (note 1) (i c = 2.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ????? v be(on) ???? ? ?? ? ???? - ??? ? ? ? ??? 1.6 ???? ? ?? ? ???? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ????????????????????? ????????????????????? current-gain - bandwidth product (note 2) (i c = 100 madc, v ce = 10 vdc, f test = 10 mhz) ????? ????? ???? ???? ??? ??? ???? ???? ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) mje200 MJE210 ????? ? ??? ? ? ??? ? ????? c ob ???? ? ?? ? ? ?? ? ???? - - ??? ? ? ? ? ? ? ??? 80 120 ???? ? ?? ? ? ?? ? ???? pf 1. pulse test: pulse width = 300 s, duty cycle 2.0%. 2. f t = ? h fe ?? f test . 16 20 figure 1. power derating t, temperature ( c) 0 40 60 100 120 160 12 p d , power dissipation (watts) 1.6 0 1.2 8.0 0.8 4.0 0.4 80 140 t c p d , power dissipation (watts) t a
mje200 - npn, MJE210 - pnp http://onsemi.com 3 figure 2. switching time test circuit +11 v 25 s 0 -9.0 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 1k i c , collector current (amps) v cc = 30 v i c /i b = 10 t j = 25 c t, time (ns) 500 300 200 100 50 t d 30 20 10 5 1 0.01 0.03 0.05 0.5 0.2 0.1 0.3 10 figure 3. turn-on time 3 2 5 2 13 t r mje200 MJE210 0.02 t, time (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 200 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal resistance jc (t) = r(t) jc jc = 8.34 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0 (single pulse) (normalized) figure 4. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01
mje200 - npn, MJE210 - pnp http://onsemi.com 4 10 v ce , collector-emitter voltage (volts) 0.1 30 7.0 0.7 bonding wire limited thermally limited @ t c = 25 c (single pulse) second breakdown limited curves apply below rated v ceo figure 5. active region safe operating area 500 s dc 5.0 20 10 7.0 5.0 3.0 2.0 1.0 100 s t j = 150 c i c , collector current (amp) 0.2 0.5 1.0 2.0 3.0 0.3 1.0ms 5.0ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c - v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values l ess than the limitations imposed by second breakdown. 10k i c , collector current (amps) 10 5k 3k 2k 1k 500 300 200 100 50 figure 6. turn-off time t, time (ns) 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 13 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f v r , reverse voltage (volts) 20 40 100 200 50 figure 7. capacitance 70 20 10 6.0 4.0 2.0 1.0 0.4 c, capacitance (pf) 0.6 t j = 25 c c ib c ob mje200 (npn) MJE210 (pnp) 30 mje200 MJE210
mje200 - npn, MJE210 - pnp http://onsemi.com 5 i c , collector current (amp) i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. ?on? voltage i c , collector current (amp) 200 400 0.07 0.1 0.3 5.0 0.05 100 80 60 40 0.2 i c , collector current (amp) figure 10. temperature coefficients 20 0.7 1.0 3.0 2.0 0.5 25 c t j = 150 c -55 c 2.0 0.05 i c , collector current (amp) 5.0 1.6 1.2 0.8 0.4 0 3.0 2.0 0.07 0.2 0.1 0.5 0.3 1.0 0.7 t j = 25 c v, voltage (volts) npn mje200 pnp MJE210 0.07 0.1 0.3 5.0 0.05 0.2 0.7 1.0 3.0 2.0 0.5 200 400 100 80 60 40 20 h fe , dc current gain 25 c t j = 150 c -55 c v ce = 1.0 v v ce = 2.0 v v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v vc for v ce(sat) vb for v be 2.0 0.05 1.6 1.2 0.8 0.4 0 3.0 2.0 0.07 0.2 0.1 0.5 0.3 1.0 0.7 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v v , temperature coefficients (mv/ c) +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 0.07 0.1 0.3 5.0 0.05 0.2 0.7 1.0 3.0 2.0 0.5 *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v , temperature coefficients (mv/ c) +2.5 +2.0 +1.5 +1.0 0 -0.5 -1.0 -1.5 -2.0 +0.5 -2.5 0.07 0.1 0.3 5.0 0.05 0.2 0.7 1.0 3.0 2.0 0.5 * vc for v ce(sat) vb for v be *applies for i c /i b h fe/3 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v ce = 1.0 v v ce = 2.0 v 5.0
mje200 - npn, MJE210 - pnp http://onsemi.com 6 package dimensions to-225 case 77-09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 077-01 thru -08 obsolete, new standard 077-09. -b- -a- m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mje200/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
